the AOT5N100 & aotf5n100 are fabricated using an AOT5N100/aotf5n100 1000v,4a n-channel mosfet v ds i d (at v gs =10v) 4a r ds(on) (at v gs =10v) < 4.2 w symbol v ds advanced high voltage mosfet process that is design ed to deliver high levels of performance and robustnes s in popular ac-dc applications.by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs. v units parameter absolute maximum ratings t a =25c unless otherwise noted 1100@150 drain-source voltage 1000 AOT5N100 aotf5n100 g d s v gs i dm i ar e ar e as peak diode recovery dv/dt dv/dt t j , t stg t l symbol r q ja r q cs r q jc * drain current limited by maximum junction tempera ture. avalanche current c 117 single pulsed avalanche energy g 235 parameter maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds junction and storage temperature range derate above 25 o c repetitive avalanche energy c t c =25c thermal characteristics 5 power dissipation b p d v/ns mj v 30 gate-source voltage t c =100c a 15 pulsed drain current c continuous drain current t c =25c i d 4 2.5 4* 2.5* 42 0.3 2.8 c/w units a c mj w w/ o c c/w 300 -55 to 150 195 1.6 c AOT5N100 aotf5n100 c/w 0.64 65 3 maximum junction-to-case maximum case-to-sink a 0.5 -- maximum junction-to-ambient a,d 65 www.freescale.net.cn 1/6 general description features
symbol min typ max units 1000 1100 bv dss / ? tj 1.04 v/ o c 1 10 i gss gate-body leakage current 100 n a v gs(th) gate threshold voltage 3.3 3.9 4.5 v r ds(on) 3.5 4.2 w g fs 5 s v sd 0.73 1 v i s maximum body-diode continuous current 4 a i sm 15 a c iss 750 950 1150 pf c oss 40 62 85 pf c rss 3.5 6 9 pf r g 2 4.3 6.5 w q g 15 19 23 nc q gs 4.6 nc q gd 6.5 nc t d(on) 27 ns t r 40 ns t d(off) 50 ns static drain-source on-resistance v gs =10v, i d =2.5a reverse transfer capacitance v gs =0v, v ds =25v, f=1mhz switching parameters i s =1a,v gs =0v v ds =40v, i d =2.5a forward transconductance turn-on rise time gate source charge gate drain charge diode forward voltage electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss zero gate voltage drain current v ds =1000v, v gs =0v m a bv dss maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime turn-off delaytime v gs =10v, v ds =500v, i d =5a, r g =25 w gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =800v, i d =5a dynamic parameters v ds =5v, i d =250 m a v ds =800v, t j =125c v ds =0v, v gs =30v v drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c i d =250 a, v gs =0v, t j =150c zero gate voltage drain current id=250 a, vgs=0v d(off) t f 33 ns t rr 350 450 550 ns q rr 4.2 5.5 6.8 m c i f =5a,di/dt=100a/ m s,v ds =100v body diode reverse recovery charge i f =5a,di/dt=100a/ m s,v ds =100v turn-off fall time body diode reverse recovery time a. the value of r q ja is measured with the device in a still air environm ent with t a =25 c. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c, ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. l=60mh, i as =2.8a, v dd =150v, r g =25 ? , starting t j =25 c www.freescale.net.cn 2/6 AOT5N100/aotf5n100 1000v,4a n-channel mosfet
typical electrical and thermal characteristics 0.0 1.5 3.0 4.5 6.0 7.5 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5v 5.5v 10v 6v 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v ds =40v 25 c 125 c 0.0 2.0 4.0 6.0 8.0 10.0 0 2 4 6 8 10 12 r ds(on) ( w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =2.5a 40 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 1e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c voltage 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 bv dss (normalized) t j (c) figure 5:break down vs. junction temparature www.freescale.net.cn 3/6 AOT5N100/aotf5n100 1000v,4a n-channel mosfet
4/6 typical electrical and thermal characteristics 0 3 6 9 12 15 0 5 10 15 20 25 30 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =800v i d =5a 1 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 10000 i d (amps) v ds (volts) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 1s 0.01 0.1 1 10 100 1 10 100 1000 10000 i d (amps) v ds (volts) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s v ds (volts) figure 10: maximum forward biased safe operating area for aotf5n100 (note f) 0 1 2 3 4 5 0 25 50 75 100 125 150 current rating i d (a) t case (c) figure 11: current de-rating (note b) v ds (volts) figure 9: maximum forward biased safe operating area for AOT5N100 (note f) www.freescale.net.cn AOT5N100/aotf5n100 1000v,4a n-channel mosfet
typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q q q q jc normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal imp edance for AOT5N100 (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.64 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t on t p d single pulse 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q q q q jc normalized transient thermal resistance pulse width (s) figure 13: normalized maximum transient thermal imp edance for aotf5n100 (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =3 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d figure 13: normalized maximum transient thermal imp edance for aotf5n100 (note f) www.freescale.net.cn 5/6 AOT5N100/aotf5n100 1000v,4a n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vgs vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr www.freescale.net.cn 6/6 AOT5N100/aotf5n100 1000v,4a n-channel mosfet
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